summary v (br)dss = -35v: r ds(on) = 0.075 : i d = -12a description this new generation of high cell density planar mosfets from zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive to220 package applications 100w class d audio output stage motor control device marking zxm6 4p035 ZXM64P035L3 issue 1 - june 2004 1 35v p-channel enhancement mode mosfet device multiples ZXM64P035L3 1000 ordering information front view
ZXM64P035L3 issue 1 - june 2004 2 parameter symbol limit unit drain-source voltage v dss -35 v gate-source voltage v gs 20 v continuous drain current (v gs = -10v; t c =25c)(a) (v gs = -10v; t a =25c)(b) i d -12 -3.3 a pulsed drain current (b) i dm -19 a continuous source current (body diode) (b) i s -2.3 a pulsed source current (body diode)(b) i sm -19 a power dissipation at t a =25c (a) linear derating factor p d 20 160 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.5 12 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum rating parameter symbol value unit junction to case (a) r jc 6.25 c/w junction to ambient (b) r ja 83.3 c/w thermal resistance
ZXM64P035L3 issue 1 - june 2004 3 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -35 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1 a v ds =-35v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.075 0.105 v gs =-10v, i d =-2.4a v gs =-4.5v, i d =-1.2a forward transconductance (1)(3) g fs 2.3 s v ds =-10v,i d =-1.2a dynamic (3) input capacitance c iss 825 pf v ds =-25v, v gs =0v, f=1mhz output capacitance c oss 250 pf reverse transfer capacitance c rss 80 pf switching (2) (3) turn-on delay time t d(on) 4.4 ns v dd =-15v, i d =-2.4a r g =6.0 , v gs =-10v rise time t r 6.2 ns turn-off delay time t d(off) 40 ns fall time t f 29.2 ns total gate charge q g 46 nc v ds =-24v,v gs =-10v, i d =-2.4a gate-source charge q gs 9nc gate-drain charge q gd 11.5 nc source-drain diode diode forward voltage (1) v sd -0.95 v t j =25 c, i s =-2.4a, v gs =0v reverse recovery time (3) t rr 30.2 ns t j =25 c, i f =-2.4a, di/dt= 100a/ s reverse recovery charge (3) q rr 27.8 nc electrical characteristics (at t a = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2001 ZXM64P035L3 4 issue 1 - june 2004 package outline dim millimetres inches min max min max a 3.56 4.82 0.140 0.189 b 0.38 1.01 0.015 0.040 b1 1.15 1.77 0.045 0.070 c1 0.41 0.50 0.016 0.020 d 14.23 16.51 0.560 0.650 e 9.66 10.66 0.380 0.419 e 2.29 2.79 0.090 0.110 e1 4.83 5.33 0.190 0.210 f 0.51 1.39 0.20 0.055 h1 5.58 6.85 0.230 0.270 j1 2.04 2.92 0.080 0.115 l 12.70 14.73 0.500 0.580 l1 6.35 0.250 p 3.54 4.08 0.139 0.160 q 2.54 3.42 0.100 0.134 package dimensions
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